PART |
Description |
Maker |
MMBD4448HSDW-TP MMBD4448HAQW-TP |
DIODE SWITCHING 80V 250MA SOT363 0.25 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE 200mW Switching Diodes
|
Micro Commercial Components, Corp.
|
BAW78C Q62702-A779 BAW78A Q62702-A784 BAW78A-BAW78 |
Silicon Switching Diodes (Switching applications High breakdown voltage) 1 A, SILICON, SIGNAL DIODE From old datasheet system
|
Siemens Group SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
SM12CXC220 SM34CXC614 SM36CXC604 SM38CXC624 SM38CX |
860 A, 1200 V, SILICON, RECTIFIER DIODE 1160 A, 3400 V, SILICON, RECTIFIER DIODE 1010 A, 3600 V, SILICON, RECTIFIER DIODE 1106 A, 3800 V, SILICON, RECTIFIER DIODE 2640 A, 3800 V, SILICON, RECTIFIER DIODE 1106 A, 3400 V, SILICON, RECTIFIER DIODE 435 A, 1500 V, SILICON, RECTIFIER DIODE 440 A, 600 V, SILICON, RECTIFIER DIODE 1160 A, 3800 V, SILICON, RECTIFIER DIODE 1160 A, 4200 V, SILICON, RECTIFIER DIODE 940 A, 800 V, SILICON, RECTIFIER DIODE 940 A, 1800 V, SILICON, RECTIFIER DIODE 940 A, 400 V, SILICON, RECTIFIER DIODE 940 A, 1000 V, SILICON, RECTIFIER DIODE 940 A, 600 V, SILICON, RECTIFIER DIODE 940 A, 1600 V, SILICON, RECTIFIER DIODE 1106 A, 4000 V, SILICON, RECTIFIER DIODE 310 A, 2600 V, SILICON, RECTIFIER DIODE 370 A, 2600 V, SILICON, RECTIFIER DIODE 2700 A, 2600 V, SILICON, RECTIFIER DIODE 860 A, 1400 V, SILICON, RECTIFIER DIODE 440 A, 400 V, SILICON, RECTIFIER DIODE 440 A, 800 V, SILICON, RECTIFIER DIODE 435 A, 1600 V, SILICON, RECTIFIER DIODE 435 A, 1800 V, SILICON, RECTIFIER DIODE 527 A, 3200 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
BAS116LT1D BAS116LT3G BAS116LT1G |
Switching Diode Switching Diod 0.2 A, 75 V, SILICON, SIGNAL DIODE, TO-236AB
|
ON Semiconductor
|
1N2282 1N1185A 1N1612 1N3055 1N4510 1N3573R 1N1581 |
35 A, 300 V, SILICON, RECTIFIER DIODE, DO-5 40 A, 150 V, SILICON, RECTIFIER DIODE, DO-5 5 A, 50 V, SILICON, RECTIFIER DIODE, DO-4 0.125 A, SILICON, SIGNAL DIODE 12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4 3.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-4 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-4 1 A, 400 V, SILICON, SIGNAL DIODE, DO-4 1 A, 200 V, SILICON, SIGNAL DIODE, DO-4 0.8 A, SILICON, SIGNAL DIODE 35 A, 800 V, SILICON, RECTIFIER DIODE, DO-5 275 A, 150 V, SILICON, RECTIFIER DIODE, DO-9
|
|
BAV70 Q68000-A6622 |
Silicon Switching Diode Array (For high-speed switchingFor high-speed switching) 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
BAS116 Q62702-A919 |
Silicon Low Leakage Diode (Low-leakage applications Medium speed switching times Single diode) 0.25 A, SILICON, SIGNAL DIODE From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
BAS521LP-7B BAS521LP-7 |
Discrete - Diodes (Less than 0.5A) - Switching Diodes 0.4 A, 325 V, SILICON, SIGNAL DIODE HIGH VOLTAGE SWITCHING DIODE
|
Diodes Incorporated
|
BGX400 |
General Purpose Diodes - Silicon Switching Diode halfbridge rectifier Silicon Switching Diodes
|
INFINEON[Infineon Technologies AG]
|
HVD133A |
Diodes>Switching Silicon Epitaxial Planar Pin Diode for Antenna Switching
|
Hitachi Semiconductor Renesas Electronics Corporation http://
|
HVU145 |
Diodes>Switching Silicon Epitaxial Planar Pin Diode for Antenna Switching
|
Renesas Electronics Corporation
|
|